T-x phase diagram of the TlGaS2-TlFeS2 system and band gap of TlGa1 − xFexS2 (0 ≤ x ≤ 0.01) single crystals
We have constructed the T - x phase diagram of the TlGaS 2 -TlFeS 2 system (simple eutectic system, eutectic at 80 mol % TlFeS 2 with a melting point of 953 K). The system contains limited series of monoclinic solid solutions based on the ternary end-members. At an annealing temperature of 933 K, th...
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Veröffentlicht in: | Inorganic materials 2012, Vol.48 (10), p.984-986 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have constructed the
T
-
x
phase diagram of the TlGaS
2
-TlFeS
2
system (simple eutectic system, eutectic at 80 mol % TlFeS
2
with a melting point of 953 K). The system contains limited series of monoclinic solid solutions based on the ternary end-members. At an annealing temperature of 933 K, the TlGaS
2
-based solid solution extends to 5 mol % TlFeS
2
and the TlFeS
2
-based solid solution extends to ≅10 mol % TlGaS
2
. We have examined the effect of partial iron substitution for gallium on the optical properties of melt-grown single crystals of the TlGaS
2
-based solid solutions and determined their band gap as a function of temperature and Fe concentration. |
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ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168512090117 |