Prospects of Ternary Cd1−xZnxS as an Electron Transport Layer and Associated Interface Defects in a Planar Lead Halide Perovskite Solar Cell via Numerical Simulation

In this study we present a ternary alloy, Cd 1− x Zn x S as an electron transport layer for a planar lead halide perovskite solar cell via numerical simulation with solar cell capacitance simulator (SCAPS) software. Performance dependence on molar composition variation in the Cd 1− x Zn x S alloy was studied for the mixed perovskite CH 3 NH 3 PbI 3− x Cl x absorber and spiro-OMeTAD hole transport material in a planar perovskite solar cell. Additionally, the defects on both Cd 1− x Zn x S/CH 3 NH 3 PbI 3− x Cl x and CH 3 NH 3 PbI 3− x Cl x /spiro-OMeTAD interface were thoroughly investigated. Simultaneously, a thickness of 700 nm for CH 3 NH 3 PbI 3− x Cl x absorber with 50-nm-thick Cd 0.2 Zn 0.8 S ( x = 0.8) was optimized. Analysis of the numerical solutions via SCAPS provides a trend and pattern for Cd 0.2 Zn 0.8 S as an effective electron transport layer for planar perovskite solar cells with a yield efficiency up to 24.83%. The planar perovskite solar cell shows an open-circuit voltage of 1.224 V, short-circuit current density of 25.283 mA/cm 2 and a fill factor of 80.22.