Manipulation of linear and nonlinear optical properties of type I and type II quantum ring GaAs/AlxGa1−xAs

We present a theoretical study of linear and nonlinear optical properties of carriers in types I and II GaAs /Al x Ga 1−x As quantum rings (QRs). We are interested in the effects of incident optical intensity, Al concentration in the barrier and rim height (h M ) on linear and nonlinear absorption and refractive index, for both types of QR. After a detailed analysis of the results and a comparison between the optical properties of type I and II QRs, we conclude that we can act on the linear and non-linear absorption coefficient and the refractive index by affecting the parameters of these nanostructures. Thus, GaAs /AlxGa1−xAs quantum rings are appropriate for tunable nano-optoelectronic devices.