Improving anti-reflectivity and laser damage threshold of SiO2/ZrO2 thin films by laser shock peening at 1064 nm
In this study, anti-reflection (AR) SiO 2 / ZrO 2 thin films with 3-layers were designed and fabricated by the essential Macleod software and physical vapor deposition, respectively. In order to improve the optical and physical properties of the prepared samples, laser shock peening (LSP) technique...
Gespeichert in:
Veröffentlicht in: | Optical and quantum electronics 2014-09, Vol.46 (9), p.1149-1155 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In this study, anti-reflection (AR)
SiO
2
/
ZrO
2
thin films with 3-layers were designed and fabricated by the essential Macleod software and physical vapor deposition, respectively. In order to improve the optical and physical properties of the prepared samples, laser shock peening (LSP) technique was applied. For this purpose, an Argon Fluoride Excimer laser
(
λ
=
193
nm
)
with 110 and 240 mJ energies and 1 Hz frequency at different pulses was used. The effect of LSP method in improving transmissions and laser damage thresholds of the prepared samples was proved by using UV–Vis–IR spectroscopy in the wavelength range of 400–1200 nm and international standard ISO11254 at 1064 nm. In addition, scanning electron microscopy was used to check the effect of applying LSP. |
---|---|
ISSN: | 0306-8919 1572-817X |
DOI: | 10.1007/s11082-013-9846-2 |