Crystal growth, optical, thermal, laser damage threshold, photoconductivity and third-order nonlinear optical studies of KCl doped sulphamic acid single crystals
Good quality of pure and 1 mol% KCl doped sulphamic acid (SA) single crystal was grown by the solvent evaporation technique. The grown crystals belong to an orthorhombic structure. The peak present in the frequency region between 2870 and 3137 cm −1 is owing to NH 3 + stretching vibration. The addit...
Gespeichert in:
Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-04, Vol.31 (8), p.6084-6096 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Good quality of pure and 1 mol% KCl doped sulphamic acid (SA) single crystal was grown by the solvent evaporation technique. The grown crystals belong to an orthorhombic structure. The peak present in the frequency region between 2870 and 3137 cm
−1
is owing to NH
3
+
stretching vibration. The addition of dopant enhances the transmittance and mechanical strength of the SA crystal. The intense emission bands are obtained at 335 and 424 nm for pure and 337 and 468 nm for 1 mol% KCl doped SA crystal, respectively. The first decomposition point observed at 229 °C and 232 °C for pure and doped SA crystals, respectively. Laser damage threshold resistant of the crystals is 57, 89 and 132 mJ for KDP, pure and 1 mol% KCl doped SA crystals, respectively. The negative photoconductivity nature of title crystals was confirmed by photoconductivity studies. The third-order nonlinear optical (TONLO) susceptibility (χ
3
) of the pure and doped crystal is 5.004 × 10
−10
esu and 7.848 × 10
−10
esu, respectively. All the results show that the grown crystals have good transmittance, high LDT, mechanical, thermal and large susceptibility values. So, the title crystals are potential material for NLO applications. |
---|---|
ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-020-03161-9 |