Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells

Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells

A method for the deposition of molybdenum oxide ( MoO x ) with high growth rates at temperatures below 200  ∘ C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO x films can be adjusted by the plasma parameters. First results of these lay...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2015-09, Vol.120 (3), p.811-816
Hauptverfasser: Ziegler, Johannes, Mews, Mathias, Kaufmann, Kai, Schneider, Thomas, Sprafke, Alexander N., Korte, Lars, Wehrspohn, Ralf B.
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Condensed Matter Physics
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Rapid Communication
Surfaces and Interfaces
Thin Films
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Zusammenfassung:A method for the deposition of molybdenum oxide ( MoO x ) with high growth rates at temperatures below 200  ∘ C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO x films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-015-9280-3