Femtosecond-laser-induced bond breaking and structural modifications in silicon, TiO2, and defective graphene: an ab initio molecular dynamics study
By exciting or heating electrons, ultrashort laser pulses have a direct influence on bond strengths in two- and three-dimensional solids. Here, we present results of ab initio molecular dynamics simulations performed using our in-house Code for Highly-excIted Valence Electron Systems (CHIVES) for th...
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Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2014, Vol.114 (1), p.1-9 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | By exciting or heating electrons, ultrashort laser pulses have a direct influence on bond strengths in two- and three-dimensional solids. Here, we present results of ab initio molecular dynamics simulations performed using our in-house Code for Highly-excIted Valence Electron Systems (CHIVES) for three systems, which each shows a distinctly different structural response to a femtosecond laser pulse. In solid silicon, we show that ultrafast laser-induced bond breaking leads to nonthermal melting, a process which occurs in three stages, involving subsequently superdiffusive, fractionally diffusive, and normally diffusive atomic motions. For TiO
2
, we find that the A
1
g
phonon is coherently excited. At room temperature, we demonstrate that these oscillations are strongly coupled to other phonon modes. In graphene with a single Stone–Wales defect, we study the in-plane and out-of-plane laser-induced atomic motions and find bond breaking, which destroys the structure, when the electrons are heated to at least 31,000 K. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-013-8080-x |