Structural properties of Sn-doped CdTe thin films grown by pulsed laser deposition using powder as target

Undoped and Sn-doped CdTe thin films were grown by a pulsed laser deposition on glass substrates at 300 °C using a powder as target. CdTe films were grown using CdTe and Sn powders, varying the tin concentration in the range of 1–7 wt. %. The structural properties were analyzed as a function of the Sn amount in the target. The x-ray diffraction shows that the undoped CdTe film has a cubic phase, while Sn-doped CdTe films have a mixture of cubic and hexagonal phases. The compositional analysis showed that the undoped CdTe film has Te excess, while Sn-doped CdTe films have Te deficiencies.