Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

A highly uniform aluminum nitride thin film has been developed by thermal atomic layer deposition (ALD), which is designed to handle high volume of 200 mm wafers. A three-sigma thickness variation of

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2024-05, Vol.42 (3)
Hauptverfasser: Mukhopadhyay, Partha, Fletcher, Ivan, Caribe Couvertier, Zuriel, Schwab, Brent, Gumpher, John, Schoenfeld, Winston V., Kretzschmar, Jon, deVilliers, Anton, Fulford, Jim
Format: Artikel
Sprache:eng
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Zusammenfassung:A highly uniform aluminum nitride thin film has been developed by thermal atomic layer deposition (ALD), which is designed to handle high volume of 200 mm wafers. A three-sigma thickness variation of
ISSN:0734-2101
1520-8559
DOI:10.1116/6.0003405