Study of resolution limits due to intrinsic bias in chemically amplified photoresists

This article presents experimental results that suggest that classical Fickian diffusion cannot account for any significant fraction of the critical dimension bias observed in chemically amplified photoresists. A transport mechanism based on reaction front propagation is proposed as a possible expla...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-11, Vol.17 (6), p.3335-3338
Hauptverfasser:	Postnikov, Sergei V., Stewart, Michael D., Tran, Hoang Vi, Nierode, Mark A., Medeiros, David R., Cao, T., Byers, Jeffrey, Webber, Stephen E., Wilson, C. Grant
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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