Study of resolution limits due to intrinsic bias in chemically amplified photoresists

Study of resolution limits due to intrinsic bias in chemically amplified photoresists

This article presents experimental results that suggest that classical Fickian diffusion cannot account for any significant fraction of the critical dimension bias observed in chemically amplified photoresists. A transport mechanism based on reaction front propagation is proposed as a possible expla...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-11, Vol.17 (6), p.3335-3338
Hauptverfasser: Postnikov, Sergei V., Stewart, Michael D., Tran, Hoang Vi, Nierode, Mark A., Medeiros, David R., Cao, T., Byers, Jeffrey, Webber, Stephen E., Wilson, C. Grant
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Sprache:eng
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Zusammenfassung:This article presents experimental results that suggest that classical Fickian diffusion cannot account for any significant fraction of the critical dimension bias observed in chemically amplified photoresists. A transport mechanism based on reaction front propagation is proposed as a possible explanation for the experimental observations.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.591007