W and WSi x Ohmic contacts on p- and n-type GaN

W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 °C. There is minimal reaction (⩽100 Å broadening of the metal/GaN interface) even at 1000 °C. Specific contact resistances in the 10 −5  Ω  cm 2 range are obtained for WSi x on Si-implanted GaN wit...

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Hauptverfasser: Cao, X. A., Ren, F., Pearton, S. J., Zeitouny, A., Eizenberg, M., Zolper, J. C., Abernathy, C. R., Han, J., Shul, R. J., Lothian, J. R.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 °C. There is minimal reaction (⩽100 Å broadening of the metal/GaN interface) even at 1000 °C. Specific contact resistances in the 10 −5  Ω  cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5×10 20   cm −3 , after annealing at 950 °C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250–300 °C, where the specific contact resistances are, typically, in the 10 −2  Ω  cm 2 range. The best contacts for W and WSi x are obtained after 700 °C annealing for periods of 30–120 s. The formation of β- W 2 N interfacial phases appear to be important in determining the contact quality.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.581799