W and WSi x Ohmic contacts on p- and n-type GaN
W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 °C. There is minimal reaction (⩽100 Å broadening of the metal/GaN interface) even at 1000 °C. Specific contact resistances in the 10 −5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN wit...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 °C. There is minimal reaction (⩽100 Å broadening of the metal/GaN interface) even at 1000 °C. Specific contact resistances in the
10
−5
Ω
cm
2
range are obtained for
WSi
x
on Si-implanted GaN with a peak doping concentration of
∼5×10
20
cm
−3
,
after annealing at 950 °C. On p-GaN, leaky Schottky diode behavior is observed for W,
WSi
x
and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250–300 °C, where the specific contact resistances are, typically, in the
10
−2
Ω
cm
2
range. The best contacts for W and
WSi
x
are obtained after 700 °C annealing for periods of 30–120 s. The formation of
β-
W
2
N
interfacial phases appear to be important in determining the contact quality. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.581799 |