Morphology influence in rapid plasma nitriding of hafnium layer for HfSiON film growth

In the chemical conversion of nanoscale materials via plasma, reaction rates different from those of the bulk materials can occur. This is evident in the case of hafnium nanoisland nitridation during the initial step of HfSiON film growth. The hafnium nanoislands formed by evaporation on a silicon s...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2019-12, Vol.37 (6)
Hauptverfasser: Kitajima, Takeshi, Kage, Ryosuke, Nakano, Toshiki
Format: Artikel
Sprache:eng
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Zusammenfassung:In the chemical conversion of nanoscale materials via plasma, reaction rates different from those of the bulk materials can occur. This is evident in the case of hafnium nanoisland nitridation during the initial step of HfSiON film growth. The hafnium nanoislands formed by evaporation on a silicon substrate were rapidly nitrided by low-temperature, low-pressure nitrogen plasma irradiation for 1 min. On the clean surface of a hafnium plate, however, the formation of hafnium nitride was not observed even at ten times that irradiation period. An observed difference of approximately 15 times the rate of the incorporation of nitrogen atoms into the surface of the Hf nanoisland over that of the Hf plate was also evident. The thickness dependence of the hafnium nitridation layer was investigated, and it was found that rapid nitridation occurred when nanoislands were present on the deposition surface.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.5109841