High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates
Capacitors based on 10 nm antiferroelectric silicon-doped hafnium oxide (Si:HfO2) thin films are investigated in terms of energy storage efficiency, cycling endurance, and reliability. Atomic layer deposition (ALD) on an area-enhanced substrate with large-scale arrays of deep-trench structures is us...
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Veröffentlicht in: | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2019-03, Vol.37 (2) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Capacitors based on 10 nm antiferroelectric silicon-doped hafnium oxide
(Si:HfO2) thin films are investigated in terms of energy storage efficiency,
cycling endurance, and reliability. Atomic layer deposition (ALD) on an area-enhanced
substrate with large-scale arrays of deep-trench structures is used to significantly
increase the energy density, yielding a value of 450 μJ/cm2
and an energy storage efficiency of 67% at a voltage of 3 V. High breakdown fields are
obtained, and the reliability measurement indicates that more than 90% of the devices
survive three years when subjected to an operating voltage of 3 V. The film stoichiometry
is optimized in terms of energy storage properties to achieve an antiferroelectric-like
hysteresis loop with low fatigue during electric field cycling and uniform electrical
characteristics throughout the 300 mm wafer. Si:HfO2 is a promising material
for novel integrated energy storage applications, as it combines CMOS compatible
manufacturing, high scalability, and conformal deposition using ALD. |
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ISSN: | 2166-2746 2166-2754 |
DOI: | 10.1116/1.5060738 |