Atmospheric spatial atomic layer deposition of ZnOS buffer layers for flexible Cu(In,Ga)Se2 solar cells
Zinc oxysulfide (ZnOS) is synthesized at atmospheric pressure in a laboratory-scale spatial atomic layer deposition setup by sequentially exposing the substrate to diethyl zinc and an H2O/H2S mixture, separated by a nitrogen gas curtain. The co-injection of H2O and H2S vapors in the same deposition...
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Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2018-09, Vol.36 (5) |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Zinc oxysulfide (ZnOS) is synthesized at atmospheric pressure in a laboratory-scale spatial atomic layer deposition setup by sequentially exposing the substrate to diethyl zinc and an H2O/H2S mixture, separated by a nitrogen gas curtain. The co-injection of H2O and H2S vapors in the same deposition zone enables an accurate control of the S/(O + S) ratio, the morphology, and the optoelectronic properties of the films. Next, the ZnOS deposition process is transferred to an industrial roll-to-roll spatial-ALD setup. ZnOS is applied as a buffer layer in flexible Cu(In,Ga)Se2 solar cells, instead of the commonly used CdS, achieving a best efficiency of typically 13% in small area cells (0.57 cm2) and 9.2% in flexible mini-modules (270 cm2). These results show the viability of atmospheric spatial-ALD as a new technique for roll-to-roll manufacturing of flexible photovoltaics modules based on a Cu(In,Ga)Se2 absorber. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.5040457 |