Reduction of persistent photoconduction in Ge-Ga-In-O semiconductors by the incorporation of nitrogen

The effect of nitrogen incorporation in Ge-Ga-In-O (GGIO) semiconductors was investigated with respect to persistent photoconduction (PPC) and the associated thin-film transistor stability under negative bias illumination stress (NBIS). As the nitrogen partial pressure [pN2 = N2/(Ar + O2 + N2)] was...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2017-03, Vol.35 (2)
Hauptverfasser: Lee, Hyun-Mo, Ok, Kyung-Chul, Jeong, Hyun-Jun, Park, Jin-Seong, Lim, Junhyung, Park, Jozeph
Format: Artikel
Sprache:eng
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Zusammenfassung:The effect of nitrogen incorporation in Ge-Ga-In-O (GGIO) semiconductors was investigated with respect to persistent photoconduction (PPC) and the associated thin-film transistor stability under negative bias illumination stress (NBIS). As the nitrogen partial pressure [pN2 = N2/(Ar + O2 + N2)] was increased from 0% to 40% during the reactive sputter growth of GGIO layers, the PPC phenomenon became less pronounced and higher device stability under NBIS was observed. X-ray photoelectron spectroscopy analyses suggest that the concentration of light-sensitive oxygen vacant sites in the GGIO semiconductors decreases as a result of nitrogen incorporation, hence the reduced PPC and higher device stability under NBIS.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4974925