Amorphous Si/SiO2 distributed Bragg reflectors with transfer printed single-crystalline Si nanomembranes

A distributed Bragg reflector (DBR) consisting of a single-crystal Si nanomembrane (NM) layer formed by the transfer printing technique on top of an evaporated amorphous Si (a-Si)/SiO2 DBR structure was demonstrated. The reflectivity of different DBR structures/pairs is measured and verified it by t...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2016-07, Vol.34 (4)
Hauptverfasser: Cho, Minkyu, Seo, Jung-Hun, Zhao, Deyin, Lee, Jaeseong, Xiong, Kanglin, Yin, Xin, Liu, Yonghao, Liu, Shih-Chia, Kim, Munho, Kim, Tong J., Wang, Xudong, Zhou, Weidong, Ma, Zhenqiang
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Sprache:eng
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Zusammenfassung:A distributed Bragg reflector (DBR) consisting of a single-crystal Si nanomembrane (NM) layer formed by the transfer printing technique on top of an evaporated amorphous Si (a-Si)/SiO2 DBR structure was demonstrated. The reflectivity of different DBR structures/pairs is measured and verified it by the simulation. An improved surface roughness of the top layer by employing a Si NM suggests that the smoother single crystalline surface not only minimizes light scattering loss but also can be an epitaxial template layer for subsequent Si growth without contributing any strain. The results indicate a simple pathway toward achieving high performance Si/SiO2 DBRs employing Si NM as a top layer. This method could also lead to the fabrication of large-area, high performance NM based DBRs at low cost with high throughput.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4945998