Effects of growth temperature on the incorporation of nitrogen in GaNAs layers

Ternary III-N-V semiconductor alloys are interesting and complex materials. GaNAs is one such material that has been studied extensively; however, the accurate determination of the N content within this material in which the growth conditions significantly increases the amount of interstitial N has...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2016-03, Vol.34 (2)
Hauptverfasser: Espinoza-Figueroa, José Ángel, Méndez-García, Víctor Hugo, Vidal, Miguel Ángel, Cruz-Hernández, Esteban, López-López, Máximo, Gallardo-Hernández, Salvador
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Sprache:eng
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Zusammenfassung:Ternary III-N-V semiconductor alloys are interesting and complex materials. GaNAs is one such material that has been studied extensively; however, the accurate determination of the N content within this material in which the growth conditions significantly increases the amount of interstitial N has not yet been reported. To address this problem, GaNAs layers (100 nm) were prepared using molecular beam epitaxy at temperatures between 400 and 600 °C with a high nominal N concentration (3%). The N content was determined using high resolution x-ray diffraction (HRXRD), secondary ion mass spectrometry (SIMS), and low-temperature photoluminescence (PL). The N concentration determined using these techniques was compared. Additionally, the relationship between the growth temperature and N concentration is discussed. The incorporation of N into interstitial sites resulted in significant variations in the N content as estimated by SIMS, HRXRD, and PL.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4942900