Advanced methodology for electrical characterization of metal/high-k interfaces

A methodology for the quantitative electrical characterization of defects at metal/high-k interfaces is proposed. It includes modelling of trapping in the oxide, fit of experiments, and calculation of the system band diagram after trapping. As a result, the defect concentrations and energy levels are extracted. The methodology is demonstrated on metal-oxide–semiconductor systems, but its results can be extended on whatever structure containing an interface between a metal and a high-k dielectric film.