Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs

A theoretical model for the MOSFET local oxide capacitance as a crucial parameter for the characterization of hot-carrier degradation has been developed. For this purpose, the conformal mapping technique is used. On the basis of the proposed approach a refined extraction scheme for the defect distri...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-01, Vol.31 (1)
Hauptverfasser: Starkov, Ivan, Enichlmair, Hubert
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A theoretical model for the MOSFET local oxide capacitance as a crucial parameter for the characterization of hot-carrier degradation has been developed. For this purpose, the conformal mapping technique is used. On the basis of the proposed approach a refined extraction scheme for the defect distribution from charge-pumping measurements has been employed. Assuming the extracted spatial trap distributions at different stress times as input, the transfer characteristics and linear drain current degradation are numerically calculated and compared with the experimental results. A very good agreement is achieved. These results demonstrate that the coordinate dependence of the oxide capacitance is extremely important for an accurate extraction of the defect profile particularly for large stress times. Additionally, the obtained results confirm the findings of our physics-based model of hot-carrier degradation.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4774106