Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

The dc characteristics of InAlN/GaN high electron mobility transistors were measured before and after irradiation with 5 MeV protons at doses up to 2 × 1015 cm−2. The on/off ratio degraded by two orders of magnitude for the highest dose, while the subthreshold slope increased from 77 to 122 mV/decad...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2012-05, Vol.30 (3), p.031202-031202-4
Hauptverfasser: Lo, Chien-Fong, Liu, L., Kang, T. S., Ren, Fan, Schwarz, C., Flitsiyan, E., Chernyak, L., Kim, Hong-Yeol, Kim, Jihyun, Pil Yun, Sang, Laboutin, O., Cao, Y., Johnson, J. W., Pearton, S. J.
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Sprache:eng
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Zusammenfassung:The dc characteristics of InAlN/GaN high electron mobility transistors were measured before and after irradiation with 5 MeV protons at doses up to 2 × 1015 cm−2. The on/off ratio degraded by two orders of magnitude for the highest dose, while the subthreshold slope increased from 77 to 122 mV/decade under these conditions. There was little change in transconductance or gate or drain currents for doses up to 2 × 1013 cm−2, but for the highest dose the drain current and transconductance decreased by ∼40% while the reverse gate current increased by a factor of ∼6. The minority carrier diffusion length was around 1 μm independent of proton dose. The InAlN/GaN heterostructure is at least as radiation hard as its AlGaN/GaN counterpart.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.3698402