Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy

Ballistic electron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidized GaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-ho...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2012-01, Vol.30 (1), p.011805-011805-4
Hauptverfasser: Qin, Hailang, Liu, Zhiqiang, Troadec, Cedric, Goh, Kuan Eng Johnson, Bosman, Michel, Ong, Beng Sheng, Chiam, Sing Yang, Pey, Kin Leong
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ballistic electron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidized GaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole pairs excited by photons emitted during scanning tunneling microscopy (STM), and the second threshold at ∼3.55 eV, which is attributed to the Au/oxidized-GaAs barrier. Our results demonstrate that the two-threshold behavior observed in BEES studies on metal/oxide samples is amenable to a physical model comprising of STM photocurrent and a metal/oxide interface barrier.
ISSN:1071-1023
2166-2746
1520-8567
2166-2754
DOI:10.1116/1.3675606