Directed assembly in epitaxial zinc oxide films on focused ion beam modified sapphire substrates

A new method for directed self-assembly using focused ion beam (FIB) and physical vapor deposition is presented. The high resolution and site-specific patterning capabilities of FIB are coupled with the self-assembly process in heteroepitaxial thin film growth. An efficient FIB-induced damage mechan...

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Veröffentlicht in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2012-01, Vol.30 (1), p.010605-010605-5
Hauptverfasser: Myers, Benjamin D., Stevens, Blake L., Rożkiewicz, Dorota I., Barnett, Scott A., Dravid, Vinayak P.
Format: Artikel
Sprache:eng
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Zusammenfassung:A new method for directed self-assembly using focused ion beam (FIB) and physical vapor deposition is presented. The high resolution and site-specific patterning capabilities of FIB are coupled with the self-assembly process in heteroepitaxial thin film growth. An efficient FIB-induced damage mechanism is exploited to pattern amorphous regions in sapphire substrates which direct the subsequent assembly of a sputter-deposited zinc oxide film. This novel approach allows for the fabrication of in-plane nano- to microscale heterostructures comprising epitaxial regions with high strain and defect density that are separated by regions of randomly oriented (in-plane) grains with much lower strain and defect density.
ISSN:1071-1023
2166-2746
1520-8567
2166-2754
DOI:10.1116/1.3672006