Towards an all-track 300 mm process for directed self-assembly
This study modifies the authors’ previously reported directed self-assembly (DSA) process of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in order to meet the throughput and material-related requirements of a semiconductor manufacturing environment. It is demonstrated that all of the bott...
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Veröffentlicht in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-11, Vol.29 (6), p.06F203-06F203-6 |
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container_title | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena |
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creator | Liu, Chi-Chun Thode, Christopher J. Rincon Delgadillo, Paulina A. Craig, Gordon S. W. Nealey, Paul F. Gronheid, Roel |
description | This study modifies the authors’ previously reported directed self-assembly (DSA) process of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in order to meet the throughput and material-related requirements of a semiconductor manufacturing environment. It is demonstrated that all of the bottleneck steps in the authors’ DSA process, including the deposition of the cross-linkable mat and the deposition of the brush layer, can be done in minutes on a hot plate in an N2 atmosphere, which simulates the processing environment of a lithography track module. A 25-nm-pitch pattern resulting from a 4:1 density multiplication was demonstrated with a manufacturing-compatible organic solvent. A preliminary uniformity study on 300 mm wafers was also presented. The modified DSA process presents a viable solution to some of the anticipated throughput-related challenges to DSA commercialization and thus, brings integration of DSA within reach of the semiconductor manufacturing industry. |
doi_str_mv | 10.1116/1.3644341 |
format | Article |
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W. ; Nealey, Paul F. ; Gronheid, Roel</creator><creatorcontrib>Liu, Chi-Chun ; Thode, Christopher J. ; Rincon Delgadillo, Paulina A. ; Craig, Gordon S. W. ; Nealey, Paul F. ; Gronheid, Roel</creatorcontrib><description>This study modifies the authors’ previously reported directed self-assembly (DSA) process of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in order to meet the throughput and material-related requirements of a semiconductor manufacturing environment. It is demonstrated that all of the bottleneck steps in the authors’ DSA process, including the deposition of the cross-linkable mat and the deposition of the brush layer, can be done in minutes on a hot plate in an N2 atmosphere, which simulates the processing environment of a lithography track module. A 25-nm-pitch pattern resulting from a 4:1 density multiplication was demonstrated with a manufacturing-compatible organic solvent. A preliminary uniformity study on 300 mm wafers was also presented. 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W.</creatorcontrib><creatorcontrib>Nealey, Paul F.</creatorcontrib><creatorcontrib>Gronheid, Roel</creatorcontrib><title>Towards an all-track 300 mm process for directed self-assembly</title><title>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>This study modifies the authors’ previously reported directed self-assembly (DSA) process of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in order to meet the throughput and material-related requirements of a semiconductor manufacturing environment. It is demonstrated that all of the bottleneck steps in the authors’ DSA process, including the deposition of the cross-linkable mat and the deposition of the brush layer, can be done in minutes on a hot plate in an N2 atmosphere, which simulates the processing environment of a lithography track module. A 25-nm-pitch pattern resulting from a 4:1 density multiplication was demonstrated with a manufacturing-compatible organic solvent. A preliminary uniformity study on 300 mm wafers was also presented. 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B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2011-11-01</date><risdate>2011</risdate><volume>29</volume><issue>6</issue><spage>06F203</spage><epage>06F203-6</epage><pages>06F203-06F203-6</pages><issn>1071-1023</issn><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>This study modifies the authors’ previously reported directed self-assembly (DSA) process of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in order to meet the throughput and material-related requirements of a semiconductor manufacturing environment. It is demonstrated that all of the bottleneck steps in the authors’ DSA process, including the deposition of the cross-linkable mat and the deposition of the brush layer, can be done in minutes on a hot plate in an N2 atmosphere, which simulates the processing environment of a lithography track module. A 25-nm-pitch pattern resulting from a 4:1 density multiplication was demonstrated with a manufacturing-compatible organic solvent. A preliminary uniformity study on 300 mm wafers was also presented. The modified DSA process presents a viable solution to some of the anticipated throughput-related challenges to DSA commercialization and thus, brings integration of DSA within reach of the semiconductor manufacturing industry.</abstract><pub>American Vacuum Society</pub><doi>10.1116/1.3644341</doi><tpages>6</tpages></addata></record> |
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title | Towards an all-track 300 mm process for directed self-assembly |
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