Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory

The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different Ar / O 2 flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.11009
Hauptverfasser:	Wang, Jer-Chyi, Chou, Pai-Chi, Lai, Chao-Sung, Liu, Li-Chi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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