Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory
The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different Ar / O 2 flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the...
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| Veröffentlicht in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.11009 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different
Ar
/
O
2
flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the memory characteristics was analyzed. It is observed that the nonstoichiometric GdO (200) structure may be the main charge-trapping site for the HfGdO silicon-oxide-nitride-oxide-silicon-type memories. The memories with
Hf
/
Gd
=
150
/
150
and
Ar
/
O
2
=
20
/
5
exhibit better electrical performance than others and can be applied into future nonvolatile memory. |
|---|---|
| ISSN: | 1071-1023 2166-2746 1520-8567 2166-2754 |
| DOI: | 10.1116/1.3527011 |