Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory
The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different Ar / O 2 flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the...
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| Veröffentlicht in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.11009 |
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| container_title | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena |
| container_volume | 29 |
| creator | Wang, Jer-Chyi Chou, Pai-Chi Lai, Chao-Sung Liu, Li-Chi |
| description | The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different
Ar
/
O
2
flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the memory characteristics was analyzed. It is observed that the nonstoichiometric GdO (200) structure may be the main charge-trapping site for the HfGdO silicon-oxide-nitride-oxide-silicon-type memories. The memories with
Hf
/
Gd
=
150
/
150
and
Ar
/
O
2
=
20
/
5
exhibit better electrical performance than others and can be applied into future nonvolatile memory. |
| doi_str_mv | 10.1116/1.3527011 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_3527011</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_3527011</sourcerecordid><originalsourceid>FETCH-LOGICAL-c365t-91d4ec10a2d5f495d585db83cccb943f7ee37a7ceaaead5b0a45e4ab6ae809053</originalsourceid><addsrcrecordid>eNqdkE1LAzEURYMoWKsL_0G2CqnJZDIfS6m2FYqzqK6HN8mbGplOhiQtzL-30oJ7V_cuDpfLIeRe8JkQInsSM6mSnAtxQSZCJZwVKssvj53nggmeyGtyE8I35zxTUk5I87KHjoVhHyN6NHTwTmMINGAfbLQHG0fqWrpql6ai-gv8Fln0MAy239IORvTU9nRTvVcbFscBae_6g-sg2g7pDnfOj7fkqoUu4N05p-Rz8foxX7F1tXybP6-ZlpmKrBQmRS04JEa1aamMKpRpCqm1bspUtjmizCHXCIBgVMMhVZhCkwEWvORKTsnDaVd7F4LHth683YEfa8HrXzm1qM9yjuzjiQ3axuNZ1_8PPjj_B9aDaeUPbx51Mg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Wang, Jer-Chyi ; Chou, Pai-Chi ; Lai, Chao-Sung ; Liu, Li-Chi</creator><creatorcontrib>Wang, Jer-Chyi ; Chou, Pai-Chi ; Lai, Chao-Sung ; Liu, Li-Chi</creatorcontrib><description>The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different
Ar
/
O
2
flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the memory characteristics was analyzed. It is observed that the nonstoichiometric GdO (200) structure may be the main charge-trapping site for the HfGdO silicon-oxide-nitride-oxide-silicon-type memories. The memories with
Hf
/
Gd
=
150
/
150
and
Ar
/
O
2
=
20
/
5
exhibit better electrical performance than others and can be applied into future nonvolatile memory.</description><identifier>ISSN: 1071-1023</identifier><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 1520-8567</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.3527011</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.11009</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-91d4ec10a2d5f495d585db83cccb943f7ee37a7ceaaead5b0a45e4ab6ae809053</citedby><cites>FETCH-LOGICAL-c365t-91d4ec10a2d5f495d585db83cccb943f7ee37a7ceaaead5b0a45e4ab6ae809053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,794,4512,27924,27925</link.rule.ids></links><search><creatorcontrib>Wang, Jer-Chyi</creatorcontrib><creatorcontrib>Chou, Pai-Chi</creatorcontrib><creatorcontrib>Lai, Chao-Sung</creatorcontrib><creatorcontrib>Liu, Li-Chi</creatorcontrib><title>Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory</title><title>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different
Ar
/
O
2
flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the memory characteristics was analyzed. It is observed that the nonstoichiometric GdO (200) structure may be the main charge-trapping site for the HfGdO silicon-oxide-nitride-oxide-silicon-type memories. The memories with
Hf
/
Gd
=
150
/
150
and
Ar
/
O
2
=
20
/
5
exhibit better electrical performance than others and can be applied into future nonvolatile memory.</description><issn>1071-1023</issn><issn>2166-2746</issn><issn>1520-8567</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqdkE1LAzEURYMoWKsL_0G2CqnJZDIfS6m2FYqzqK6HN8mbGplOhiQtzL-30oJ7V_cuDpfLIeRe8JkQInsSM6mSnAtxQSZCJZwVKssvj53nggmeyGtyE8I35zxTUk5I87KHjoVhHyN6NHTwTmMINGAfbLQHG0fqWrpql6ai-gv8Fln0MAy239IORvTU9nRTvVcbFscBae_6g-sg2g7pDnfOj7fkqoUu4N05p-Rz8foxX7F1tXybP6-ZlpmKrBQmRS04JEa1aamMKpRpCqm1bspUtjmizCHXCIBgVMMhVZhCkwEWvORKTsnDaVd7F4LHth683YEfa8HrXzm1qM9yjuzjiQ3axuNZ1_8PPjj_B9aDaeUPbx51Mg</recordid><startdate>201101</startdate><enddate>201101</enddate><creator>Wang, Jer-Chyi</creator><creator>Chou, Pai-Chi</creator><creator>Lai, Chao-Sung</creator><creator>Liu, Li-Chi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201101</creationdate><title>Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory</title><author>Wang, Jer-Chyi ; Chou, Pai-Chi ; Lai, Chao-Sung ; Liu, Li-Chi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-91d4ec10a2d5f495d585db83cccb943f7ee37a7ceaaead5b0a45e4ab6ae809053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Jer-Chyi</creatorcontrib><creatorcontrib>Chou, Pai-Chi</creatorcontrib><creatorcontrib>Lai, Chao-Sung</creatorcontrib><creatorcontrib>Liu, Li-Chi</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Jer-Chyi</au><au>Chou, Pai-Chi</au><au>Lai, Chao-Sung</au><au>Liu, Li-Chi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory</atitle><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2011-01</date><risdate>2011</risdate><volume>29</volume><issue>1</issue><spage>11009</spage><pages>11009-</pages><issn>1071-1023</issn><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>The charge-trapping layer of HfGdO dielectrics deposited by a dual-sputtered process for a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory application was investigated. Different
Ar
/
O
2
flow ratios and Hf/Gd dual-sputtered power ratios were performed and the process sensitivity on the memory characteristics was analyzed. It is observed that the nonstoichiometric GdO (200) structure may be the main charge-trapping site for the HfGdO silicon-oxide-nitride-oxide-silicon-type memories. The memories with
Hf
/
Gd
=
150
/
150
and
Ar
/
O
2
=
20
/
5
exhibit better electrical performance than others and can be applied into future nonvolatile memory.</abstract><doi>10.1116/1.3527011</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1071-1023 |
| ispartof | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.11009 |
| issn | 1071-1023 2166-2746 1520-8567 2166-2754 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_3527011 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| title | Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T02%3A44%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dual-sputtered%20process%20sensitivity%20of%20HfGdO%20charge-trapping%20layer%20in%20SONOS-type%20nonvolatile%20memory&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20B,%20Microelectronics%20and%20nanometer%20structures%20processing,%20measurement%20and%20phenomena&rft.au=Wang,%20Jer-Chyi&rft.date=2011-01&rft.volume=29&rft.issue=1&rft.spage=11009&rft.pages=11009-&rft.issn=1071-1023&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.3527011&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_3527011%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |