Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode
The effect of electron incidence into xenon gas molecules has been investigated by using a nanocrystalline silicon (nc-Si) planar ballistic emitter. Vacuum-ultraviolet light emission is observed without discharging when the nc-Si device is driven in xenon gas. The emission spectrum of xenon at 10 kP...
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| Veröffentlicht in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-03, Vol.27 (2), p.772-774 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The effect of electron incidence into xenon gas molecules has been investigated by using a nanocrystalline silicon (nc-Si) planar ballistic emitter. Vacuum-ultraviolet light emission is observed without discharging when the nc-Si device is driven in xenon gas. The emission spectrum of xenon at
10
kPa
shows peaks at 152 and
172
nm
which originate from
Xe
2
*
radiation. These results strongly suggest that energetic electrons directly excite xenon molecules followed by radiative relaxations. The observed effect is potentially applicable to mercury-free, efficient, and stable flat panel light sources. |
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| ISSN: | 1071-1023 1520-8567 |
| DOI: | 10.1116/1.3070655 |