Dry etching of SiGe alloys by xenon difluoride
Dry etching with xenon difluoride ( Xe F 2 ) is a well-known process for the isotropic removal of silicon. The etching of silicon-germanium alloys with Xe F 2 , however, has not yet been investigated. Here, the Xe F 2 dry etching of SiGe alloys was characterized versus composition and Xe F 2 partial...
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| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.385-388 |
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| container_end_page | 388 |
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| container_issue | 3 |
| container_start_page | 385 |
| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 26 |
| creator | Xuan, G. Adam, T. N. Lv, P.-C. Sustersic, N. Coppinger, M. J. Kolodzey, J. Suehle, J. Fitzgerald, E. |
| description | Dry etching with xenon difluoride
(
Xe
F
2
)
is a well-known process for the isotropic removal of silicon. The etching of silicon-germanium alloys with
Xe
F
2
, however, has not yet been investigated. Here, the
Xe
F
2
dry etching of SiGe alloys was characterized versus composition and
Xe
F
2
partial pressures. It was found that the etch rates showed a strong dependence on Ge content of the etched materials. The roughness of the etched surfaces was also investigated. This study provides etch rates versus process conditions and etched surface roughness, which are useful for accurately fabricating SiGe-based structures and devices. |
| doi_str_mv | 10.1116/1.2891245 |
| format | Article |
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(
Xe
F
2
)
is a well-known process for the isotropic removal of silicon. The etching of silicon-germanium alloys with
Xe
F
2
, however, has not yet been investigated. Here, the
Xe
F
2
dry etching of SiGe alloys was characterized versus composition and
Xe
F
2
partial pressures. It was found that the etch rates showed a strong dependence on Ge content of the etched materials. The roughness of the etched surfaces was also investigated. This study provides etch rates versus process conditions and etched surface roughness, which are useful for accurately fabricating SiGe-based structures and devices.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.2891245</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><publisher>American Vacuum Society</publisher><ispartof>Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.385-388</ispartof><rights>American Vacuum Society</rights><rights>2008 American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-f77e940f9f2c71b11be351e9e5b07b559c2bcd4b06ae2aeef0148f4cb088450a3</citedby><cites>FETCH-LOGICAL-c353t-f77e940f9f2c71b11be351e9e5b07b559c2bcd4b06ae2aeef0148f4cb088450a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,790,4498,27901,27902</link.rule.ids></links><search><creatorcontrib>Xuan, G.</creatorcontrib><creatorcontrib>Adam, T. N.</creatorcontrib><creatorcontrib>Lv, P.-C.</creatorcontrib><creatorcontrib>Sustersic, N.</creatorcontrib><creatorcontrib>Coppinger, M. J.</creatorcontrib><creatorcontrib>Kolodzey, J.</creatorcontrib><creatorcontrib>Suehle, J.</creatorcontrib><creatorcontrib>Fitzgerald, E.</creatorcontrib><title>Dry etching of SiGe alloys by xenon difluoride</title><title>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</title><description>Dry etching with xenon difluoride
(
Xe
F
2
)
is a well-known process for the isotropic removal of silicon. The etching of silicon-germanium alloys with
Xe
F
2
, however, has not yet been investigated. Here, the
Xe
F
2
dry etching of SiGe alloys was characterized versus composition and
Xe
F
2
partial pressures. It was found that the etch rates showed a strong dependence on Ge content of the etched materials. The roughness of the etched surfaces was also investigated. This study provides etch rates versus process conditions and etched surface roughness, which are useful for accurately fabricating SiGe-based structures and devices.</description><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqNj01LxDAURYMoOI4u_AfZKnR8L036sXAho47CgAt1HZI00UhthqSK_fd2mIIrxdXdnHu5h5BThAUiFhe4YFWNjIs9MkPBIKuEqPfJDMqcZwwBD8lRSm8AwBgUM7K4jgO1vXn13QsNjj76laWqbcOQqB7ol-1CRxvv2o8QfWOPyYFTbbInU87J8-3N0_IuWz-s7pdX68zkIu8zV5a25uBqx0yJGlHbXKCtrdBQ6vGRYdo0XEOhLFPWOkBeOW40VBUXoPI5OdvtmhhSitbJTfTvKg4SQW5FJcpJdGQvd2wyvle9D93v8GgrJ1sZnNzajv3zf_f_gj9D_AHlpnH5N5pUdXc</recordid><startdate>20080501</startdate><enddate>20080501</enddate><creator>Xuan, G.</creator><creator>Adam, T. N.</creator><creator>Lv, P.-C.</creator><creator>Sustersic, N.</creator><creator>Coppinger, M. J.</creator><creator>Kolodzey, J.</creator><creator>Suehle, J.</creator><creator>Fitzgerald, E.</creator><general>American Vacuum Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080501</creationdate><title>Dry etching of SiGe alloys by xenon difluoride</title><author>Xuan, G. ; Adam, T. N. ; Lv, P.-C. ; Sustersic, N. ; Coppinger, M. J. ; Kolodzey, J. ; Suehle, J. ; Fitzgerald, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-f77e940f9f2c71b11be351e9e5b07b559c2bcd4b06ae2aeef0148f4cb088450a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xuan, G.</creatorcontrib><creatorcontrib>Adam, T. N.</creatorcontrib><creatorcontrib>Lv, P.-C.</creatorcontrib><creatorcontrib>Sustersic, N.</creatorcontrib><creatorcontrib>Coppinger, M. J.</creatorcontrib><creatorcontrib>Kolodzey, J.</creatorcontrib><creatorcontrib>Suehle, J.</creatorcontrib><creatorcontrib>Fitzgerald, E.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xuan, G.</au><au>Adam, T. N.</au><au>Lv, P.-C.</au><au>Sustersic, N.</au><au>Coppinger, M. J.</au><au>Kolodzey, J.</au><au>Suehle, J.</au><au>Fitzgerald, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dry etching of SiGe alloys by xenon difluoride</atitle><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle><date>2008-05-01</date><risdate>2008</risdate><volume>26</volume><issue>3</issue><spage>385</spage><epage>388</epage><pages>385-388</pages><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>Dry etching with xenon difluoride
(
Xe
F
2
)
is a well-known process for the isotropic removal of silicon. The etching of silicon-germanium alloys with
Xe
F
2
, however, has not yet been investigated. Here, the
Xe
F
2
dry etching of SiGe alloys was characterized versus composition and
Xe
F
2
partial pressures. It was found that the etch rates showed a strong dependence on Ge content of the etched materials. The roughness of the etched surfaces was also investigated. This study provides etch rates versus process conditions and etched surface roughness, which are useful for accurately fabricating SiGe-based structures and devices.</abstract><pub>American Vacuum Society</pub><doi>10.1116/1.2891245</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.385-388 |
| issn | 0734-2101 1520-8559 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_2891245 |
| source | AIP Journals |
| title | Dry etching of SiGe alloys by xenon difluoride |
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