Dry etching of SiGe alloys by xenon difluoride

Dry etching with xenon difluoride ( Xe F 2 ) is a well-known process for the isotropic removal of silicon. The etching of silicon-germanium alloys with Xe F 2 , however, has not yet been investigated. Here, the Xe F 2 dry etching of SiGe alloys was characterized versus composition and Xe F 2 partial...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.385-388
Hauptverfasser: Xuan, G., Adam, T. N., Lv, P.-C., Sustersic, N., Coppinger, M. J., Kolodzey, J., Suehle, J., Fitzgerald, E.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Dry etching with xenon difluoride ( Xe F 2 ) is a well-known process for the isotropic removal of silicon. The etching of silicon-germanium alloys with Xe F 2 , however, has not yet been investigated. Here, the Xe F 2 dry etching of SiGe alloys was characterized versus composition and Xe F 2 partial pressures. It was found that the etch rates showed a strong dependence on Ge content of the etched materials. The roughness of the etched surfaces was also investigated. This study provides etch rates versus process conditions and etched surface roughness, which are useful for accurately fabricating SiGe-based structures and devices.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.2891245