Development of novel tungsten-doped high mobility transparent conductive In 2 O 3 thin films

A novel high mobility transparent conductive oxide thin film, tungsten-doped indium oxide (IWO), has been successfully grown on conventional glass substrates by reactive direct current magnetron sputtering technique from a metallic target. Analyses of x-ray photoelectron spectroscopy and x-ray diffraction reveal that tetravalent and hexavalent tungsten ions substitute for trivalent host indium ions without changing the crystalline structure of In 2 O 3 . IWO thin films were grown with resistivity of 4.4 × 10 − 4 Ω cm , carrier mobility of 52.8 cm 2 V − 1 S − 1 ; transmittance exceeding 80% at wavelengths between 380 and 900 nm , and average roughness of 7.5 nm .