Raman spectroscopy study of the influence of processing conditionson the structure of polycrystalline diamond films

Diamond films are prepared by microwave plasma-enhanced chemical-vapor deposition on Si (100) substrates using the H 2 - Ar - CH 4 gases. Raman scattering data, including the peak position, intensity, area, and width, are analyzed in depth and used to obtain the s p 3 - and s p 2 -bonded carbon contents and the nature of internal stresses in the films. Polarization behavior of the Raman peaks is analyzed to assess its role on the quantitative analysis of the diamond films, which suggested that the 1150 cm − 1 Raman peak in nanocrystalline diamond films could be attributed to s p 2 -bonded carbon. The role of the H 2 ∕ Ar content in the gas mixture and substrate temperature on the characteristics of the diamond film is studied. Thickness and grain size of diamond films are also determined by scanning electron microscopy and related to the deposition conditions and Raman results. Deposition conditions, which led to highest s p 3 -bonded carbon content and growth rate, are identified.