Liquid immersion lithography: Why, how, and when?

Liquid immersion lithography, especially at 193 nm , is a serious candidate for extending projection optical lithography to the 65 nm node and beyond. This article reviews the status of this technology, the potential pitfalls that it may still encounter, and also the potential to extend it to 157 nm...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2004-11, Vol.22 (6), p.2877-2881
Hauptverfasser: Rothschild, M., Bloomstein, T. M., Kunz, R. R., Liberman, V., Switkes, M., Palmacci, S. T., Sedlacek, J. H. C., Hardy, D., Grenville, A.
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Sprache:eng
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Zusammenfassung:Liquid immersion lithography, especially at 193 nm , is a serious candidate for extending projection optical lithography to the 65 nm node and beyond. This article reviews the status of this technology, the potential pitfalls that it may still encounter, and also the potential to extend it to 157 nm and to higher-index liquids. At 193 nm , no fundamental obstacles have been found yet, although defect control and materials compatibility must still be worked out. At 157 nm , significant progress has been made in developing suitable liquids. The next hurdle is to increase their refractive index, in order to make the transition in wavelengths cost-effective.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1802955