High-power collimated laser-plasma source for proximity x-ray nanolithography
A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point sou...
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Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-01, Vol.21 (1), p.280-287 |
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creator | Gaeta, C. J. Rieger, H. Turcu, I. C. E. Forber, R. A. Campeau, S. M. Cassidy, K. L. Powers, M. F. Stone, A. Maldonado, J. R. Mrowka, S. French, G. Naungayan, J. Kelsy, C. Hark, P. Morris, J. H. Foster, R. M. Carosella, J. C. Fleming, D. Selzer, R. Siegert, H. Smith, H. I. Lim, M. H. Cheng, Z. Burdett, J. Gibson, D. Whitlock, R. R. Dozier, C. M. Newman, D. A. |
description | A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point source x-ray radiation is collimated with a polycapillary optic to a parallel x-ray beam. The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices. |
doi_str_mv | 10.1116/1.1539070 |
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The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices.</description><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqdkE9LwzAchoMoOKcHv0GuCpn50yTrUYZuwsSLgrfyS5tskXYpSdT121vZwLun5_Lw8vIgdM3ojDGm7tiMSVFSTU_QhElOyVwqfYomVIuCcMbez9FFSh-UUiWFmKDnld9sSR--bcR1aFvfQbYNbiHZSPoRHeAUPmNtsQsR9zHsfefzgPckwoB3sAutz9uwidBvh0t05qBN9urIKXp7fHhdrMj6Zfm0uF-TWiiRSamKQquCQ60NA21N0cyVK7kzvJBUNloZMJrOnVVGgZWlarhxFBxYIbnjYopuDrt1DClF66o-js_jUDFa_XaoWHXsMLq3BzfVPkP2Yfc_-SvEP7HqGyd-AO7ZbYw</recordid><startdate>200301</startdate><enddate>200301</enddate><creator>Gaeta, C. 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The point source x-ray radiation is collimated with a polycapillary optic to a parallel x-ray beam. The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices.</abstract><doi>10.1116/1.1539070</doi><tpages>8</tpages></addata></record> |
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title | High-power collimated laser-plasma source for proximity x-ray nanolithography |
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