High-power collimated laser-plasma source for proximity x-ray nanolithography

A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point sou...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-01, Vol.21 (1), p.280-287
Hauptverfasser: Gaeta, C. J., Rieger, H., Turcu, I. C. E., Forber, R. A., Campeau, S. M., Cassidy, K. L., Powers, M. F., Stone, A., Maldonado, J. R., Mrowka, S., French, G., Naungayan, J., Kelsy, C., Hark, P., Morris, J. H., Foster, R. M., Carosella, J. C., Fleming, D., Selzer, R., Siegert, H., Smith, H. I., Lim, M. H., Cheng, Z., Burdett, J., Gibson, D., Whitlock, R. R., Dozier, C. M., Newman, D. A.
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container_end_page 287
container_issue 1
container_start_page 280
container_title Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
container_volume 21
creator Gaeta, C. J.
Rieger, H.
Turcu, I. C. E.
Forber, R. A.
Campeau, S. M.
Cassidy, K. L.
Powers, M. F.
Stone, A.
Maldonado, J. R.
Mrowka, S.
French, G.
Naungayan, J.
Kelsy, C.
Hark, P.
Morris, J. H.
Foster, R. M.
Carosella, J. C.
Fleming, D.
Selzer, R.
Siegert, H.
Smith, H. I.
Lim, M. H.
Cheng, Z.
Burdett, J.
Gibson, D.
Whitlock, R. R.
Dozier, C. M.
Newman, D. A.
description A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point source x-ray radiation is collimated with a polycapillary optic to a parallel x-ray beam. The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices.
doi_str_mv 10.1116/1.1539070
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title High-power collimated laser-plasma source for proximity x-ray nanolithography
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