High-power collimated laser-plasma source for proximity x-ray nanolithography

A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point sou...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-01, Vol.21 (1), p.280-287
Hauptverfasser: Gaeta, C. J., Rieger, H., Turcu, I. C. E., Forber, R. A., Campeau, S. M., Cassidy, K. L., Powers, M. F., Stone, A., Maldonado, J. R., Mrowka, S., French, G., Naungayan, J., Kelsy, C., Hark, P., Morris, J. H., Foster, R. M., Carosella, J. C., Fleming, D., Selzer, R., Siegert, H., Smith, H. I., Lim, M. H., Cheng, Z., Burdett, J., Gibson, D., Whitlock, R. R., Dozier, C. M., Newman, D. A.
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Sprache:eng
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Zusammenfassung:A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point source x-ray radiation is collimated with a polycapillary optic to a parallel x-ray beam. The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1539070