Fabrication and field emission characteristics of lateral diamond field emitter

Lateral diamond field emitters were fabricated by a diamond patterning technique that utilizes oxide patterning and lift-off process on a silicon-on-insulator wafer. An anode–cathode spacing of 2 μm between the diamond anode and cathode was achieved. The fabricated lateral diamond emitter diode exhi...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-01, Vol.21 (1), p.593-596
Hauptverfasser:	Kang, W. P., Davidson, J. L., Wisitsora-at, A., Howell, M., Jamaludin, A., Wong, Y. M., Soh, K. L., Kerns, D. V.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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