Fabrication and field emission characteristics of lateral diamond field emitter
Lateral diamond field emitters were fabricated by a diamond patterning technique that utilizes oxide patterning and lift-off process on a silicon-on-insulator wafer. An anode–cathode spacing of 2 μm between the diamond anode and cathode was achieved. The fabricated lateral diamond emitter diode exhi...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-01, Vol.21 (1), p.593-596 |
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| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| container_volume | 21 |
| creator | Kang, W. P. Davidson, J. L. Wisitsora-at, A. Howell, M. Jamaludin, A. Wong, Y. M. Soh, K. L. Kerns, D. V. |
| description | Lateral diamond field emitters were fabricated by a diamond patterning technique that utilizes oxide patterning and lift-off process on a silicon-on-insulator wafer. An anode–cathode spacing of 2 μm between the diamond anode and cathode was achieved. The fabricated lateral diamond emitter diode exhibits excellent emission characteristics with a low turn-on voltage of
∼5
V
and a high emission current of 6 μA, from four diamond fingers, at an anode voltage of 25 V. The emission current is stable over time, even at high emission current. The low turn-on voltage (turn-on field
∼3
V
/μ
m
)
and high emission characteristics are among the best of reported lateral field emitter structures. The lateral diamond field emitter has potential applications in vacuum microelectronics, sensors, and microelectromechanical systems. |
| doi_str_mv | 10.1116/1.1516187 |
| format | Article |
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∼5
V
and a high emission current of 6 μA, from four diamond fingers, at an anode voltage of 25 V. The emission current is stable over time, even at high emission current. The low turn-on voltage (turn-on field
∼3
V
/μ
m
)
and high emission characteristics are among the best of reported lateral field emitter structures. The lateral diamond field emitter has potential applications in vacuum microelectronics, sensors, and microelectromechanical systems.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.1516187</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-01, Vol.21 (1), p.593-596</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-e16d745aad496314efc7735138568fac4595fb02bfac6c4531aae4b9ddc354483</citedby><cites>FETCH-LOGICAL-c363t-e16d745aad496314efc7735138568fac4595fb02bfac6c4531aae4b9ddc354483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,777,781,786,787,791,4498,23911,23912,25121,27905,27906</link.rule.ids></links><search><creatorcontrib>Kang, W. P.</creatorcontrib><creatorcontrib>Davidson, J. L.</creatorcontrib><creatorcontrib>Wisitsora-at, A.</creatorcontrib><creatorcontrib>Howell, M.</creatorcontrib><creatorcontrib>Jamaludin, A.</creatorcontrib><creatorcontrib>Wong, Y. M.</creatorcontrib><creatorcontrib>Soh, K. L.</creatorcontrib><creatorcontrib>Kerns, D. V.</creatorcontrib><title>Fabrication and field emission characteristics of lateral diamond field emitter</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>Lateral diamond field emitters were fabricated by a diamond patterning technique that utilizes oxide patterning and lift-off process on a silicon-on-insulator wafer. An anode–cathode spacing of 2 μm between the diamond anode and cathode was achieved. The fabricated lateral diamond emitter diode exhibits excellent emission characteristics with a low turn-on voltage of
∼5
V
and a high emission current of 6 μA, from four diamond fingers, at an anode voltage of 25 V. The emission current is stable over time, even at high emission current. The low turn-on voltage (turn-on field
∼3
V
/μ
m
)
and high emission characteristics are among the best of reported lateral field emitter structures. The lateral diamond field emitter has potential applications in vacuum microelectronics, sensors, and microelectromechanical systems.</description><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRMFYP_oO9KqTuZD-SHKVYFQq9KHgLk_3AlaQpu4vgv3driwqCp5n35Zlh5iXkEtgcANQNzEGCgqY-IgXIipWNVPUxKVjNRVkBvJySsxjfGGNKcl6Q9RL74DUmP20obgx13g6G2tHHuLP0KwbUyQYfk9eRTo4OmCUO1Hgcp98TKfvn5MThEO3Foc7I8_LuafFQrtb3j4vbVam54qm0oEwtJKIRreIgrNN1zSXwfG7jUAvZStezqs-9yooDohV9a4zmUoiGz8jVfq8OU4zBum4b_IjhowPW7ZLooDskkdnrPRu1T1-ffsPvU_gBu61x_8F_N38CiLZtfg</recordid><startdate>200301</startdate><enddate>200301</enddate><creator>Kang, W. P.</creator><creator>Davidson, J. L.</creator><creator>Wisitsora-at, A.</creator><creator>Howell, M.</creator><creator>Jamaludin, A.</creator><creator>Wong, Y. M.</creator><creator>Soh, K. L.</creator><creator>Kerns, D. V.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200301</creationdate><title>Fabrication and field emission characteristics of lateral diamond field emitter</title><author>Kang, W. P. ; Davidson, J. L. ; Wisitsora-at, A. ; Howell, M. ; Jamaludin, A. ; Wong, Y. M. ; Soh, K. L. ; Kerns, D. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-e16d745aad496314efc7735138568fac4595fb02bfac6c4531aae4b9ddc354483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kang, W. P.</creatorcontrib><creatorcontrib>Davidson, J. L.</creatorcontrib><creatorcontrib>Wisitsora-at, A.</creatorcontrib><creatorcontrib>Howell, M.</creatorcontrib><creatorcontrib>Jamaludin, A.</creatorcontrib><creatorcontrib>Wong, Y. M.</creatorcontrib><creatorcontrib>Soh, K. L.</creatorcontrib><creatorcontrib>Kerns, D. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kang, W. P.</au><au>Davidson, J. L.</au><au>Wisitsora-at, A.</au><au>Howell, M.</au><au>Jamaludin, A.</au><au>Wong, Y. M.</au><au>Soh, K. L.</au><au>Kerns, D. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and field emission characteristics of lateral diamond field emitter</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2003-01</date><risdate>2003</risdate><volume>21</volume><issue>1</issue><spage>593</spage><epage>596</epage><pages>593-596</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>Lateral diamond field emitters were fabricated by a diamond patterning technique that utilizes oxide patterning and lift-off process on a silicon-on-insulator wafer. An anode–cathode spacing of 2 μm between the diamond anode and cathode was achieved. The fabricated lateral diamond emitter diode exhibits excellent emission characteristics with a low turn-on voltage of
∼5
V
and a high emission current of 6 μA, from four diamond fingers, at an anode voltage of 25 V. The emission current is stable over time, even at high emission current. The low turn-on voltage (turn-on field
∼3
V
/μ
m
)
and high emission characteristics are among the best of reported lateral field emitter structures. The lateral diamond field emitter has potential applications in vacuum microelectronics, sensors, and microelectromechanical systems.</abstract><doi>10.1116/1.1516187</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-01, Vol.21 (1), p.593-596 |
| issn | 0734-211X 1071-1023 1520-8567 |
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| source | AIP Journals Complete |
| title | Fabrication and field emission characteristics of lateral diamond field emitter |
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