Bi epitaxy on polar InSb(111)A/B faces
Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a (1×1) surface structure,...
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| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-07, Vol.20 (4), p.1191-1194 |
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| container_end_page | 1194 |
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| container_issue | 4 |
| container_start_page | 1191 |
| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 20 |
| creator | Cho, Sunglae Um, Young-Ho Kim, Yunki Wong, George K. L. Ketterson, J. B. Hong, Jung-Il |
| description | Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a
(1×1)
surface structure, i.e., no surface reconstruction. However, Bi on InSb(111)A shows a
(2×2)
structure for thicknesses less than 16 Å, thereafter changing to a
(1×1)
structure. On both surfaces, Bi grows in a layer-by-layer growth mode with high crystallinity and sharp interfaces. |
| doi_str_mv | 10.1116/1.1479735 |
| format | Article |
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(1×1)
surface structure, i.e., no surface reconstruction. However, Bi on InSb(111)A shows a
(2×2)
structure for thicknesses less than 16 Å, thereafter changing to a
(1×1)
structure. On both surfaces, Bi grows in a layer-by-layer growth mode with high crystallinity and sharp interfaces.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.1479735</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><subject>Crystallography ; Epitaxial growth ; Film growth ; Indium compounds ; Interfaces (materials) ; Molecular beam epitaxy ; Surface structure ; Surface treatment ; Thickness measurement ; Thin films</subject><ispartof>Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-07, Vol.20 (4), p.1191-1194</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-63e9a82c1882528e256e411e75b94846a0487523060bef1c5eeabe593f43ace73</citedby><cites>FETCH-LOGICAL-c329t-63e9a82c1882528e256e411e75b94846a0487523060bef1c5eeabe593f43ace73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,790,4498,27901,27902</link.rule.ids></links><search><creatorcontrib>Cho, Sunglae</creatorcontrib><creatorcontrib>Um, Young-Ho</creatorcontrib><creatorcontrib>Kim, Yunki</creatorcontrib><creatorcontrib>Wong, George K. L.</creatorcontrib><creatorcontrib>Ketterson, J. B.</creatorcontrib><creatorcontrib>Hong, Jung-Il</creatorcontrib><title>Bi epitaxy on polar InSb(111)A/B faces</title><title>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</title><description>Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a
(1×1)
surface structure, i.e., no surface reconstruction. However, Bi on InSb(111)A shows a
(2×2)
structure for thicknesses less than 16 Å, thereafter changing to a
(1×1)
structure. On both surfaces, Bi grows in a layer-by-layer growth mode with high crystallinity and sharp interfaces.</description><subject>Crystallography</subject><subject>Epitaxial growth</subject><subject>Film growth</subject><subject>Indium compounds</subject><subject>Interfaces (materials)</subject><subject>Molecular beam epitaxy</subject><subject>Surface structure</subject><subject>Surface treatment</subject><subject>Thickness measurement</subject><subject>Thin films</subject><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNp90EtLw0AUBeBBFKzVhf8gK7VC2rnzztIWH4WCC3U9TMYbiKSZOJOK_fdGWnQhuLqbj3O4h5BzoFMAUDOYgtCF5vKAjEAymhspi0MyopqLnAGFY3KS0hullDGqRuRiXmfY1b373GahzbrQuJgt26fyaoib3MzmWeU8plNyVLkm4dn-jsnL3e3z4iFfPd4vFzer3HNW9LniWDjDPBjDJDPIpEIBgFqWhTBCOSqMloxTRUuswEtEV6IseCX4UKP5mFzucrsY3jeYeruuk8emcS2GTbJaSCUpCDbIyU76GFKKWNku1msXtxao_Z7Cgt1PMdjrnU1--LSvQ_uDP0L8hbZ7rf7Df5O_AEaAaGw</recordid><startdate>20020701</startdate><enddate>20020701</enddate><creator>Cho, Sunglae</creator><creator>Um, Young-Ho</creator><creator>Kim, Yunki</creator><creator>Wong, George K. L.</creator><creator>Ketterson, J. B.</creator><creator>Hong, Jung-Il</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7TC</scope></search><sort><creationdate>20020701</creationdate><title>Bi epitaxy on polar InSb(111)A/B faces</title><author>Cho, Sunglae ; Um, Young-Ho ; Kim, Yunki ; Wong, George K. L. ; Ketterson, J. B. ; Hong, Jung-Il</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-63e9a82c1882528e256e411e75b94846a0487523060bef1c5eeabe593f43ace73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Crystallography</topic><topic>Epitaxial growth</topic><topic>Film growth</topic><topic>Indium compounds</topic><topic>Interfaces (materials)</topic><topic>Molecular beam epitaxy</topic><topic>Surface structure</topic><topic>Surface treatment</topic><topic>Thickness measurement</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, Sunglae</creatorcontrib><creatorcontrib>Um, Young-Ho</creatorcontrib><creatorcontrib>Kim, Yunki</creatorcontrib><creatorcontrib>Wong, George K. L.</creatorcontrib><creatorcontrib>Ketterson, J. B.</creatorcontrib><creatorcontrib>Hong, Jung-Il</creatorcontrib><collection>CrossRef</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, Sunglae</au><au>Um, Young-Ho</au><au>Kim, Yunki</au><au>Wong, George K. L.</au><au>Ketterson, J. B.</au><au>Hong, Jung-Il</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bi epitaxy on polar InSb(111)A/B faces</atitle><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle><date>2002-07-01</date><risdate>2002</risdate><volume>20</volume><issue>4</issue><spage>1191</spage><epage>1194</epage><pages>1191-1194</pages><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a
(1×1)
surface structure, i.e., no surface reconstruction. However, Bi on InSb(111)A shows a
(2×2)
structure for thicknesses less than 16 Å, thereafter changing to a
(1×1)
structure. On both surfaces, Bi grows in a layer-by-layer growth mode with high crystallinity and sharp interfaces.</abstract><doi>10.1116/1.1479735</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-07, Vol.20 (4), p.1191-1194 |
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| language | eng |
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| source | AIP Journals Complete |
| subjects | Crystallography Epitaxial growth Film growth Indium compounds Interfaces (materials) Molecular beam epitaxy Surface structure Surface treatment Thickness measurement Thin films |
| title | Bi epitaxy on polar InSb(111)A/B faces |
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