Bi epitaxy on polar InSb(111)A/B faces

Bi epitaxy on polar InSb(111)A/B faces

Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a (1×1) surface structure,...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-07, Vol.20 (4), p.1191-1194
Hauptverfasser: Cho, Sunglae, Um, Young-Ho, Kim, Yunki, Wong, George K. L., Ketterson, J. B., Hong, Jung-Il
Format: Artikel
Sprache:eng
Schlagworte:
Crystallography
Epitaxial growth
Film growth
Indium compounds
Interfaces (materials)
Molecular beam epitaxy
Surface structure
Surface treatment
Thickness measurement
Thin films
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Zusammenfassung:Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a (1×1) surface structure, i.e., no surface reconstruction. However, Bi on InSb(111)A shows a (2×2) structure for thicknesses less than 16 Å, thereafter changing to a (1×1) structure. On both surfaces, Bi grows in a layer-by-layer growth mode with high crystallinity and sharp interfaces.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1479735