Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy
This article describes a scanning probe microscopy technique for quantitative high-speed voltage wave form measurement inside an operating integrated circuit. Internal signals are determined by sensing the local electrostatic force on a noncontacting micromachined probe cantilever that is closely po...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Surfaces, and Films, 2002-05, Vol.20 (3), p.999-1003 |
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| container_end_page | 1003 |
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| container_issue | 3 |
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| container_title | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| container_volume | 20 |
| creator | Weng, Z. Falkingham, C. J. Bridges, G. E. Thomson, D. J. |
| description | This article describes a scanning probe microscopy technique for quantitative high-speed voltage wave form measurement inside an operating integrated circuit. Internal signals are determined by sensing the local electrostatic force on a noncontacting micromachined probe cantilever that is closely positioned above the circuit test point. Amplitude modulation based downconversion is employed to measure repetitive high-frequency signals which can have a bandwidth much greater than the mechanical response of the probe. A force-nulling technique is used to obtain accurate absolute voltages without the need for complex calibration or precise probe positioning, and enables direct measurement of passivated circuits. A method of eliminating dc offset errors, such as that due to material work function differences, is described. Measurement of signals on the passivated interconnects of a wideband distributed amplifier is presented. The instrument demonstrates a voltage accuracy of |
| doi_str_mv | 10.1116/1.1460901 |
| format | Article |
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J. ; Bridges, G. E. ; Thomson, D. J.</creator><creatorcontrib>Weng, Z. ; Falkingham, C. J. ; Bridges, G. E. ; Thomson, D. J.</creatorcontrib><description>This article describes a scanning probe microscopy technique for quantitative high-speed voltage wave form measurement inside an operating integrated circuit. Internal signals are determined by sensing the local electrostatic force on a noncontacting micromachined probe cantilever that is closely positioned above the circuit test point. Amplitude modulation based downconversion is employed to measure repetitive high-frequency signals which can have a bandwidth much greater than the mechanical response of the probe. A force-nulling technique is used to obtain accurate absolute voltages without the need for complex calibration or precise probe positioning, and enables direct measurement of passivated circuits. A method of eliminating dc offset errors, such as that due to material work function differences, is described. Measurement of signals on the passivated interconnects of a wideband distributed amplifier is presented. The instrument demonstrates a voltage accuracy of <30 mV over a dynamic range of 2.5 V.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.1460901</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><subject>Amplitude modulation ; Bandwidth ; Broadband amplifiers ; Electromagnetic waves ; Integrated circuit testing ; Optical interconnects ; Optical microscopy ; Passive networks ; Probes ; Voltage measurement</subject><ispartof>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2002-05, Vol.20 (3), p.999-1003</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-6dfc8861502a9e249cb99a1901d4f0373f347c9af0866b237ec558f65049ca93</citedby><cites>FETCH-LOGICAL-c329t-6dfc8861502a9e249cb99a1901d4f0373f347c9af0866b237ec558f65049ca93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902</link.rule.ids></links><search><creatorcontrib>Weng, Z.</creatorcontrib><creatorcontrib>Falkingham, C. J.</creatorcontrib><creatorcontrib>Bridges, G. E.</creatorcontrib><creatorcontrib>Thomson, D. J.</creatorcontrib><title>Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy</title><title>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films</title><description>This article describes a scanning probe microscopy technique for quantitative high-speed voltage wave form measurement inside an operating integrated circuit. Internal signals are determined by sensing the local electrostatic force on a noncontacting micromachined probe cantilever that is closely positioned above the circuit test point. Amplitude modulation based downconversion is employed to measure repetitive high-frequency signals which can have a bandwidth much greater than the mechanical response of the probe. A force-nulling technique is used to obtain accurate absolute voltages without the need for complex calibration or precise probe positioning, and enables direct measurement of passivated circuits. A method of eliminating dc offset errors, such as that due to material work function differences, is described. Measurement of signals on the passivated interconnects of a wideband distributed amplifier is presented. The instrument demonstrates a voltage accuracy of <30 mV over a dynamic range of 2.5 V.</description><subject>Amplitude modulation</subject><subject>Bandwidth</subject><subject>Broadband amplifiers</subject><subject>Electromagnetic waves</subject><subject>Integrated circuit testing</subject><subject>Optical interconnects</subject><subject>Optical microscopy</subject><subject>Passive networks</subject><subject>Probes</subject><subject>Voltage measurement</subject><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqd0MtKxDAUBuAgCo6jC98gO1Go5tKmzVIGbzAgwuxDmiadSJvWJB3o25u5gHtXOZCPc_kBuMXoEWPMnvAjzhniCJ-BBS4Iyqqi4OdggUqaZwQjfAmuQvhGCBGC2AKEr0m6aKOMdqfhbuiibDXstQyT1712EQ4Gbm27zYzXP5N2aobWRe2d7A5F62XUDVTWq8lGGGybfgKsZxiUdM66Fo5-qFNPq_wQ1DDO1-DCJKNvTu8SbF5fNqv3bP359rF6XmeKEh4z1hhVVQwXiEiuSc5VzbnE6bYmN4iW1NC8VFwaVDFWE1pqVRSVYQVKVHK6BHfHtml-2jxE0dugdNdJp4cpiDJnFDNC8iTvj3K_YfDaiNHbXvpZYCT2sQosTrEm-3C0QR1SG9z_8G7wf1CMjaG_QPqIWQ</recordid><startdate>20020501</startdate><enddate>20020501</enddate><creator>Weng, Z.</creator><creator>Falkingham, C. 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J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-6dfc8861502a9e249cb99a1901d4f0373f347c9af0866b237ec558f65049ca93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Amplitude modulation</topic><topic>Bandwidth</topic><topic>Broadband amplifiers</topic><topic>Electromagnetic waves</topic><topic>Integrated circuit testing</topic><topic>Optical interconnects</topic><topic>Optical microscopy</topic><topic>Passive networks</topic><topic>Probes</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Weng, Z.</creatorcontrib><creatorcontrib>Falkingham, C. J.</creatorcontrib><creatorcontrib>Bridges, G. E.</creatorcontrib><creatorcontrib>Thomson, D. 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J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy</atitle><jtitle>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films</jtitle><date>2002-05-01</date><risdate>2002</risdate><volume>20</volume><issue>3</issue><spage>999</spage><epage>1003</epage><pages>999-1003</pages><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>This article describes a scanning probe microscopy technique for quantitative high-speed voltage wave form measurement inside an operating integrated circuit. Internal signals are determined by sensing the local electrostatic force on a noncontacting micromachined probe cantilever that is closely positioned above the circuit test point. Amplitude modulation based downconversion is employed to measure repetitive high-frequency signals which can have a bandwidth much greater than the mechanical response of the probe. A force-nulling technique is used to obtain accurate absolute voltages without the need for complex calibration or precise probe positioning, and enables direct measurement of passivated circuits. A method of eliminating dc offset errors, such as that due to material work function differences, is described. Measurement of signals on the passivated interconnects of a wideband distributed amplifier is presented. The instrument demonstrates a voltage accuracy of <30 mV over a dynamic range of 2.5 V.</abstract><doi>10.1116/1.1460901</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2002-05, Vol.20 (3), p.999-1003 |
| issn | 0734-2101 1520-8559 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_1460901 |
| source | AIP Journals Complete |
| subjects | Amplitude modulation Bandwidth Broadband amplifiers Electromagnetic waves Integrated circuit testing Optical interconnects Optical microscopy Passive networks Probes Voltage measurement |
| title | Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy |
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