Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD) 3 (OD=octanedionate)

Pure Ru thin films were deposited on Si substrate using Ru ( OD ) 3 (OD = octanedionate) as a new liquid precursor with a newly designed warm wall reactor by metalorganic chemical vapor deposition (MOCVD). Resistivity and film structure were largely dependent on MOCVD process parameters such as deposition temperature, O 2 /( O 2 +Ar) ratio, and reactor pressure. With the increase of O 2 /( O 2 +Ar ) ratio, minimum resistivity (20 μΩ cm) was obtained and then the resistivity was increased due to the abnormal increase of surface roughness. By modifying the position of a single quartz injector, uniform deposition of Ru thin films on an 8 in. Si wafer could be obtained.