Device simulation and performance optimization of simplified silicon solar cell

In this paper, a silicon solar cell has been investigated for the optimization of parameters emitter doping concentration and front surface recombination velocity using PC1D software. From I-V and P-V curve of silicon solar cell optimum values has been obtained for doping concentration of emitter and front surface recombination velocity. Simulation shows that as the emitter doping concentration and front surface recombination velocity increases all the three parameters short circuit current (Isc), maximum power (Pmax) and open circuit voltage (Voc) decreases. The simulated cell and optimized cell has an efficiency of 26.45% and 27.87%. The optimization of emitter doping and front surface recombination velocity increases efficiency by a factor of 1.42%.