650 V vertical Al0.51Ga0.49N power Schottky diodes

650 V vertical Al0.51Ga0.49N power Schottky diodes

We report high-Al-composition (HAC) Al0.51Ga0.49N vertical power Schottky barrier diodes (SBDs) on sapphire substrates grown by metal organic chemical vapor deposition. The fabricated vertical HAC AlGaN-on-sapphire SBDs exhibit a low turn-on voltage of 1.31 V, a high on/off ratio of ∼107, a low idea...

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Veröffentlicht in:Applied physics letters 2024-10, Vol.125 (18)
Hauptverfasser: Chen, Hang, Zhang, Shuhui, Yang, Tianpeng, Mi, Tingting, Wang, Xiaowen, Liu, Chao
Format: Artikel
Sprache:eng
Schlagworte:
Electric potential
Metalorganic chemical vapor deposition
Organic chemistry
Sapphire
Schottky diodes
Substrates
Voltage
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Zusammenfassung:We report high-Al-composition (HAC) Al0.51Ga0.49N vertical power Schottky barrier diodes (SBDs) on sapphire substrates grown by metal organic chemical vapor deposition. The fabricated vertical HAC AlGaN-on-sapphire SBDs exhibit a low turn-on voltage of 1.31 V, a high on/off ratio of ∼107, a low ideality factor of 1.35, and a high breakdown voltage of 662 V.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0233479