Effect of ground-state charge transfer on photoexcited charge transfer in transition metal dichalcogenide heterostructures

We report an experimental investigation on the effect of ground-state charge transfer and its induced electric field on photoexcited charge transfer in van der Waals heterostructures. Two heterostructure samples were fabricated by stacking an undoped WSe2 monolayer with either a Nb-doped or undoped MoSe2 monolayer. While no ground-state charge transfer is expected in the MoSe2/WSe2 heterostructure, the doped holes in the MoSe2:Nb/WSe2 heterostructure can transfer to WSe2, creating a space-charge electric field. By comparing the photoluminescence and time-resolved differential reflectance of the two heterostructures, we find that photoexcited hole transfer from MoSe2 to WSe2 is largely blocked by this field, whereas photoexcited electron transfer from WSe2 to MoSe2 is less affected. These results provide insight into the impact of doping on the charge-transfer performance of van der Waals heterostructures.