Comparative analysis of Schmitt trigger and Schmitt trigger modified SRAM cells using 18 nm FinFET technology
CMOS and MOSFET are two primary technologies for designing the memory cell but these technologies are unstable for the low technology nodes. Nowadays, FinFET technology is stable for high power density and low technology nodes. In this manuscript, simulations of the SRAM cell are performed using 18n...
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| creator | Sachdeva, Ashish Rana, Gautam Sharma, Kulbhushan |
| description | CMOS and MOSFET are two primary technologies for designing the memory cell but these technologies are unstable for the low technology nodes. Nowadays, FinFET technology is stable for high power density and low technology nodes. In this manuscript, simulations of the SRAM cell are performed using 18nm FinFET technology with voltage 0.5V, the ST SRAM cell shows HSNM of 222 mV, RSNM of 118 mV, and WSNM of 204 mV while, ST-modified shows the HSNM of 190 mV, RSNM of151 mV, and WSNM of 205 mV. Owing to this, the stability of the ST-modified SRAM cell is better than the ST SRAM cell. ThisSRAM cell can be used for low-power devices like mobile phones and computing devices. |
| doi_str_mv | 10.1063/5.0228075 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0228075</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3115584483</sourcerecordid><originalsourceid>FETCH-LOGICAL-p635-9236e4f4557ca24d5d2723c6400613267ef36cd959897daed48ae68f26617a1b3</originalsourceid><addsrcrecordid>eNplkM9LwzAYhoMoOKcH_4OAN6Ezv5Mex3AqTATdwVuISdpltE1tMqH_vZXt5umF73344H0AuMVogZGgD3yBCFFI8jMww5zjQgoszsEMoZIVhNHPS3CV0h4hUkqpZqBdxbY3g8nhx0PTmWZMIcFYwQ-7a0POMA-hrv0wde7frY0uVMFPxfvyFVrfNAkeUuhqiBXsWrgO3fpxC7O3uy42sR6vwUVlmuRvTjkH2wlYPRebt6eX1XJT9ILyoiRUeFYxzqU1hDnuiCTUCoaQwJQI6SsqrCt5qUrpjHdMGS9URYTA0uAvOgd3x7f9EL8PPmW9j4dhGpc0xZMVxZiiE3V_pJINeRIQO90PoTXDqDHSfzY11yeb9BfQ32XT</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>3115584483</pqid></control><display><type>conference_proceeding</type><title>Comparative analysis of Schmitt trigger and Schmitt trigger modified SRAM cells using 18 nm FinFET technology</title><source>AIP Journals Complete</source><creator>Sachdeva, Ashish ; Rana, Gautam ; Sharma, Kulbhushan</creator><contributor>Malhotra, Shivani ; Kumar, Amit ; Sandhu, Amanpreet</contributor><creatorcontrib>Sachdeva, Ashish ; Rana, Gautam ; Sharma, Kulbhushan ; Malhotra, Shivani ; Kumar, Amit ; Sandhu, Amanpreet</creatorcontrib><description>CMOS and MOSFET are two primary technologies for designing the memory cell but these technologies are unstable for the low technology nodes. Nowadays, FinFET technology is stable for high power density and low technology nodes. In this manuscript, simulations of the SRAM cell are performed using 18nm FinFET technology with voltage 0.5V, the ST SRAM cell shows HSNM of 222 mV, RSNM of 118 mV, and WSNM of 204 mV while, ST-modified shows the HSNM of 190 mV, RSNM of151 mV, and WSNM of 205 mV. Owing to this, the stability of the ST-modified SRAM cell is better than the ST SRAM cell. ThisSRAM cell can be used for low-power devices like mobile phones and computing devices.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0228075</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Nodes ; Power management ; Schmitt triggers ; Static random access memory ; Technology assessment</subject><ispartof>AIP Conference Proceedings, 2024, Vol.3209 (1)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0228075$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,794,4512,23930,23931,25140,27924,27925,76384</link.rule.ids></links><search><contributor>Malhotra, Shivani</contributor><contributor>Kumar, Amit</contributor><contributor>Sandhu, Amanpreet</contributor><creatorcontrib>Sachdeva, Ashish</creatorcontrib><creatorcontrib>Rana, Gautam</creatorcontrib><creatorcontrib>Sharma, Kulbhushan</creatorcontrib><title>Comparative analysis of Schmitt trigger and Schmitt trigger modified SRAM cells using 18 nm FinFET technology</title><title>AIP Conference Proceedings</title><description>CMOS and MOSFET are two primary technologies for designing the memory cell but these technologies are unstable for the low technology nodes. Nowadays, FinFET technology is stable for high power density and low technology nodes. In this manuscript, simulations of the SRAM cell are performed using 18nm FinFET technology with voltage 0.5V, the ST SRAM cell shows HSNM of 222 mV, RSNM of 118 mV, and WSNM of 204 mV while, ST-modified shows the HSNM of 190 mV, RSNM of151 mV, and WSNM of 205 mV. Owing to this, the stability of the ST-modified SRAM cell is better than the ST SRAM cell. ThisSRAM cell can be used for low-power devices like mobile phones and computing devices.</description><subject>Nodes</subject><subject>Power management</subject><subject>Schmitt triggers</subject><subject>Static random access memory</subject><subject>Technology assessment</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2024</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNplkM9LwzAYhoMoOKcH_4OAN6Ezv5Mex3AqTATdwVuISdpltE1tMqH_vZXt5umF73344H0AuMVogZGgD3yBCFFI8jMww5zjQgoszsEMoZIVhNHPS3CV0h4hUkqpZqBdxbY3g8nhx0PTmWZMIcFYwQ-7a0POMA-hrv0wde7frY0uVMFPxfvyFVrfNAkeUuhqiBXsWrgO3fpxC7O3uy42sR6vwUVlmuRvTjkH2wlYPRebt6eX1XJT9ILyoiRUeFYxzqU1hDnuiCTUCoaQwJQI6SsqrCt5qUrpjHdMGS9URYTA0uAvOgd3x7f9EL8PPmW9j4dhGpc0xZMVxZiiE3V_pJINeRIQO90PoTXDqDHSfzY11yeb9BfQ32XT</recordid><startdate>20241011</startdate><enddate>20241011</enddate><creator>Sachdeva, Ashish</creator><creator>Rana, Gautam</creator><creator>Sharma, Kulbhushan</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20241011</creationdate><title>Comparative analysis of Schmitt trigger and Schmitt trigger modified SRAM cells using 18 nm FinFET technology</title><author>Sachdeva, Ashish ; Rana, Gautam ; Sharma, Kulbhushan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p635-9236e4f4557ca24d5d2723c6400613267ef36cd959897daed48ae68f26617a1b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Nodes</topic><topic>Power management</topic><topic>Schmitt triggers</topic><topic>Static random access memory</topic><topic>Technology assessment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sachdeva, Ashish</creatorcontrib><creatorcontrib>Rana, Gautam</creatorcontrib><creatorcontrib>Sharma, Kulbhushan</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sachdeva, Ashish</au><au>Rana, Gautam</au><au>Sharma, Kulbhushan</au><au>Malhotra, Shivani</au><au>Kumar, Amit</au><au>Sandhu, Amanpreet</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Comparative analysis of Schmitt trigger and Schmitt trigger modified SRAM cells using 18 nm FinFET technology</atitle><btitle>AIP Conference Proceedings</btitle><date>2024-10-11</date><risdate>2024</risdate><volume>3209</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>CMOS and MOSFET are two primary technologies for designing the memory cell but these technologies are unstable for the low technology nodes. Nowadays, FinFET technology is stable for high power density and low technology nodes. In this manuscript, simulations of the SRAM cell are performed using 18nm FinFET technology with voltage 0.5V, the ST SRAM cell shows HSNM of 222 mV, RSNM of 118 mV, and WSNM of 204 mV while, ST-modified shows the HSNM of 190 mV, RSNM of151 mV, and WSNM of 205 mV. Owing to this, the stability of the ST-modified SRAM cell is better than the ST SRAM cell. ThisSRAM cell can be used for low-power devices like mobile phones and computing devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0228075</doi><tpages>6</tpages></addata></record> |
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| source | AIP Journals Complete |
| subjects | Nodes Power management Schmitt triggers Static random access memory Technology assessment |
| title | Comparative analysis of Schmitt trigger and Schmitt trigger modified SRAM cells using 18 nm FinFET technology |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T03%3A25%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Comparative%20analysis%20of%20Schmitt%20trigger%20and%20Schmitt%20trigger%20modified%20SRAM%20cells%20using%2018%20nm%20FinFET%20technology&rft.btitle=AIP%20Conference%20Proceedings&rft.au=Sachdeva,%20Ashish&rft.date=2024-10-11&rft.volume=3209&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.coden=APCPCS&rft_id=info:doi/10.1063/5.0228075&rft_dat=%3Cproquest_scita%3E3115584483%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3115584483&rft_id=info:pmid/&rfr_iscdi=true |