Comparative analysis of Schmitt trigger and Schmitt trigger modified SRAM cells using 18 nm FinFET technology

CMOS and MOSFET are two primary technologies for designing the memory cell but these technologies are unstable for the low technology nodes. Nowadays, FinFET technology is stable for high power density and low technology nodes. In this manuscript, simulations of the SRAM cell are performed using 18nm FinFET technology with voltage 0.5V, the ST SRAM cell shows HSNM of 222 mV, RSNM of 118 mV, and WSNM of 204 mV while, ST-modified shows the HSNM of 190 mV, RSNM of151 mV, and WSNM of 205 mV. Owing to this, the stability of the ST-modified SRAM cell is better than the ST SRAM cell. ThisSRAM cell can be used for low-power devices like mobile phones and computing devices.