Structural and electrical properties of low energy ion beam Kr irradiated Bi/Se bilayer

The current study involved the sequential deposition of Bi (∼50nm)/Se (∼50nm) thin films onto a Silicon substrate using the e-beam evaporation method. The process was carried out at room temperature and under a pressure of 2×10−5 mbar. The Bi/Se bilayers were irradiated with ion beams of 350 KeV Kr+1. Ion beam processing is one of the distinctive approaches to create thin films and it has recently been employed to create thermoelectric thin films. It was demonstrated that these thermoelectric films made with an ion beam were nanostructured and had a higher Seebeck coefficient. Applications for binary Bi2Se3 thin films, which are part of group V-VI, include photoconductivity, photosensitivity, and thermoelectric power. It is a semiconductor with a small band gap. It has drawn a lot of interest because of its alluring thermoelectric and Hall effect uses. The samples were then characterised by XRD, SEM and Rutherford backscattering spectrometry (RBS). Since the irradiated sample offered very high resistance its electrical measurements were not carried out. Electrical measurements like Hall effect, Seebeck coefficient and resistivity were carried out for pristine sample and pristine structural results were compared with irradiated sample.