High frequency performance analysis using simulation of Graphene based Field Effect Transistor (GFET)

In the present paper, Graphene Field Effect Transistor model is studied. Firstly, a 5nm thick poly-silicon film is deposited and Graphene structure is generated. Graphene, with carrier mobility at 10,000cm2/V-s is the channel material. The output and transfer curves are drawn to plot characteristics...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Neha, Kumar, Manoj, Singh, Sajjan
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Carrier mobility Energy gap Field effect transistors Graphene Semiconductor devices Silicon films Silicon transistors
Online-Zugang:	Volltext
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