High frequency performance analysis using simulation of Graphene based Field Effect Transistor (GFET)

In the present paper, Graphene Field Effect Transistor model is studied. Firstly, a 5nm thick poly-silicon film is deposited and Graphene structure is generated. Graphene, with carrier mobility at 10,000cm2/V-s is the channel material. The output and transfer curves are drawn to plot characteristics. Pristine Graphene is treated as a semi-metal with zero band gap. The lesser band gap, causes a relatively low ION/IOFF as compared to the Silicon transistor, therefore in digital, GFET is still lagging behind Silicon BJT. High mobility is more suited for RF applications. Therefore, the maximum cut-off frequency (fT) and maximum oscillation frequency (fmax) are taken into consideration as the FOMs’ parameters in the current article.