High frequency performance analysis using simulation of Graphene based Field Effect Transistor (GFET)
In the present paper, Graphene Field Effect Transistor model is studied. Firstly, a 5nm thick poly-silicon film is deposited and Graphene structure is generated. Graphene, with carrier mobility at 10,000cm2/V-s is the channel material. The output and transfer curves are drawn to plot characteristics...
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| creator | Neha Kumar, Manoj Singh, Sajjan |
| description | In the present paper, Graphene Field Effect Transistor model is studied. Firstly, a 5nm thick poly-silicon film is deposited and Graphene structure is generated. Graphene, with carrier mobility at 10,000cm2/V-s is the channel material. The output and transfer curves are drawn to plot characteristics. Pristine Graphene is treated as a semi-metal with zero band gap. The lesser band gap, causes a relatively low ION/IOFF as compared to the Silicon transistor, therefore in digital, GFET is still lagging behind Silicon BJT. High mobility is more suited for RF applications. Therefore, the maximum cut-off frequency (fT) and maximum oscillation frequency (fmax) are taken into consideration as the FOMs’ parameters in the current article. |
| doi_str_mv | 10.1063/5.0221602 |
| format | Conference Proceeding |
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Firstly, a 5nm thick poly-silicon film is deposited and Graphene structure is generated. Graphene, with carrier mobility at 10,000cm2/V-s is the channel material. The output and transfer curves are drawn to plot characteristics. Pristine Graphene is treated as a semi-metal with zero band gap. The lesser band gap, causes a relatively low ION/IOFF as compared to the Silicon transistor, therefore in digital, GFET is still lagging behind Silicon BJT. High mobility is more suited for RF applications. 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Firstly, a 5nm thick poly-silicon film is deposited and Graphene structure is generated. Graphene, with carrier mobility at 10,000cm2/V-s is the channel material. The output and transfer curves are drawn to plot characteristics. Pristine Graphene is treated as a semi-metal with zero band gap. The lesser band gap, causes a relatively low ION/IOFF as compared to the Silicon transistor, therefore in digital, GFET is still lagging behind Silicon BJT. High mobility is more suited for RF applications. 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| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0221602 |
| source | AIP Journals Complete |
| subjects | Carrier mobility Energy gap Field effect transistors Graphene Semiconductor devices Silicon films Silicon transistors |
| title | High frequency performance analysis using simulation of Graphene based Field Effect Transistor (GFET) |
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